general description hm6n70/f,the silicon n-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. the transistor can be used in various power switching circuit for system miniaturization and higher efficiency. the package form is to-220, to-220fwhich accords with the rohs standard. features l fast switching l low on resistance(rdson 2.2 ? ) l low gate charge ( typical data:18.6nc ) l low reverse transfer capacitances (typical:6.6pf) l 100% single pulse avalanche energy test applications power switch circuit of adaptor and charger. absolute tc= 25 unless otherwise specified symbol parameter rating units v dss drain-to-source voltage 700 v continuous drain current 6 a i d continuous drain current t c = 100 c 3.6 a i dm a1 pulsed drain current 24 a v gs gate-to-source voltage 30 v e as a2 single pulse avalanche energy 180 mj e ar a1 avalanche energy ,repetitive 26 mj i ar a1 avalanche current 2.3 a dv/dt a3 peak diode recovery dv/dt 5.0 v/ns power dissipation 85 w p d derating factor above 25 c 0.68 w/ t j t stg operating junction and storage temperature range 150 C55 to 150 t l maximumtemperature for soldering 300 v dss 700 v i d 6 a p d (t c =25 ) 85 w r ds(on)typ 1.8 ? hm6n70/f 1 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com g s d to-220 g s d to-220 ) free datasheet http://www.datasheetlist.com/
electrical characteristics tc= 25 unless otherwise specified off characteristics rating symbol parameter test conditions min. typ. max. units v dss drain to source breakdown voltage v gs =0v, i d =250 a 700 -- -- v bv dss / t j bvdss temperature coefficient id=250ua,reference2 5 -- 0.71 -- v/ v ds = 700v, v gs = 0v, t a = 25 -- -- 1 i dss drain to source leakage current v ds =560v, v gs = 0v, t a = 125 -- -- 100 a i gss(f) gate to source forward leakage v gs =+30v -- -- 100 na i gss(r) gate to source reverse leakage v gs =-30v -- -- -100 na on characteristics rating symbol parameter test conditions min. typ. max. units r ds(on) drain-to-source on-resistance v gs =10v,i d =3a -- 1 .8 2.2 ? v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 4.0 v pulse width tp 380 s, ?2% dynamic characteristics rating symbol parameter test conditions min. typ. max. units g fs forward transconductance v ds =15v, i d =3a -- 4 -- s c iss input capacitance -- 707 -- c oss output capacitance -- 69 -- c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1.0mhz -- 6.6 -- pf resistive switching characteristics rating symbol parameter test conditions min. typ. max. units t d(on) turn-on delay time -- 10 -- tr rise time -- 1 1 -- t d(off) turn-off delay time -- 32 -- t f fall time i d =6a v dd =350v v gs = 10v r g =9.1 ? -- 15 -- ns q g total gate charge -- 18 .6 q gs gate to source charge -- 3 . 4 -- q gd gate to drain ( miller)charge i d =6a v dd =350v v gs = 10v -- 7 . 4 -- nc hm6n70/f 2 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com free datasheet http://www.datasheetlist.com/
source-drain diode characteristics rating symbol parameter test conditions min. typ. max. units i s continuous source current (body diode) -- -- 6 a i sm maximum pulsed current (body diode) -- -- 24 a v sd diode forward voltage i s =6a,v gs =0v -- -- 1 . 5 v trr reverse recovery time -- 196 ns qrr reverse recovery charge i s =6a,t j = 25 c di f /dt=100a/us, v gs =0v -- 895 n c pulse width tp 380 s, ?2% symbol parameter typ. units r jc junction-to-case 1.47 /w r ja junction-to-ambient 62.5 /w a1 repetitive rating; pulse width limited by maximum junction temperature a2 l=10.0mh, i d =6a, start t j =25 a3 i sd =6a,di/dt 100a/us,v dd bv ds, start t j =25 hm6n70/f 3 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com free datasheet http://www.datasheetlist.com/
characteristics curve tc , case temperature , c 75 100 pd , p ower dissipation watts 25 25 0 50 75 50 100 125 150 0 tc , case temperature , c 50 id , drain current , amps 0 1 2 3 4 5 0 25 150 100 75 125 6 hm6n70/f 4 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com free datasheet http://www.datasheetlist.com/
hm6n70/f 5 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com free datasheet http://www.datasheetlist.com/
hm6n70/f 6 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com free datasheet http://www.datasheetlist.com/
testcircuitandwaveform hm6n70/f 7 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com free datasheet http://www.datasheetlist.com/
hm6n70/f 8 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com free datasheet http://www.datasheetlist.com/
package dimensions to-220f hm6n70/f 9 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com free datasheet http://www.datasheetlist.com/
the name and content of poisonous and harmful material in products hazardous substance part s name pb hg cd cr(vi) pbb pbde limit 0.1% 0.1% 0.01% 0.1% 0.1% 0.1% lead frame molding compound chip wire bonding solder note means the hazardous material is under the criterion of sj/t11363-2006. means the hazardous material exceeds the criterion of sj/t11363-2006. the plumbum element of solder exist in products presently, but within the allowed range of eurogroup s rohs. warnings 1. exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. it is suggested to be used under 80 percent of the maximun ratings of the device. 2. when installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. vdmosfets is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. hm6n70/f 10 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com free datasheet http://www.datasheetlist.com/
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